Patent · US Active

Optoelectronic semiconductor device

US12413049B2 · kind B2 · utility

0Cited by

3References

17Claims

0Family size

Assignees

UNIVERSITY OF SOUTHAMPTON · GB
University College London · GB

Inventors

Frederic Gardes · Winchester, GB
Alwyn John Seeds · London, GB
Huiyun Liu · London, GB
Siming W. Chen · Berkeley Heights, US

Key dates

Filing date	Jul 27, 2020
Grant date	Sep 9, 2025
Priority date	—
Expiry date	Jan 12, 2043

Classification

Technology area (CPC G)Physics
CPC primaryG02B2006/12061
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor device for use in an optoelectronic integrated circuit; the device comprising: a group four substrate, a waveguide, and a group III/V multilayer stack; wherein the group III/V multilayer stack comprises a quantum component for producing light for the waveguide; wherein the waveguide comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.