Semiconductor devices having air spacer
US12414289B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2022 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Sep 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A semiconductor device includes: a stack including a conductive structure and an insulation structure stacked on each other on a substrate, wherein the stack extends in a first direction substantially parallel to an upper surface of the substrate; first, second and third spacers sequentially stacked on each other on a sidewall of the stack in a second direction substantially parallel to the upper surface of the substrate and crossing the first direction; and a capping pattern disposed on the second spacer, wherein: the second spacer is an air spacer including air, and an upper surface of a portion of the third spacer is substantially coplanar with an upper surface of the capping pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.