Deep trench structure for a capacitive device
US12414314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2023 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | May 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/642
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.