Modified tunnel oxide layer and preparation method, TOPCon structure and preparation method, and solar cell
US12414403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2025 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Jan 7, 2045 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A modified tunnel oxide layer and a preparation method, a TOPCon structure and a preparation method, and a solar cell are provided. The modified tunnel oxide layer is SiOx subjected to plasma surface treatment, and a Si4+ content in the SiOx is greater than or equal to above 18%. The density of the interface state subjected to plasma surface treatment decreases, and compared with the silicon oxide layer prepared in the prior arts, boron has a low diffusion rate in the modified silicon oxide layer and hence the damaging effect of the boron on the tunnel oxide layer is reduced effectively, thereby improving the integrity of the silicon oxide layer and maintaining chemical passivation effect. The modified tunnel oxide layer significantly increases the performance indexes of the TOPCon structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.