A/M/X crystalline material, photovoltaic device, and preparation methods thereof
US12414404B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2023 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | May 29, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer (103). The photoactive crystalline material layer (103) includes a penetrating crystal grain (313), where the penetrating crystal grain (313) is a crystal grain penetrating through the photoactive crystalline material layer (103), and a percentage p of a quantity of penetrating crystal grains (313) in a total quantity of crystal grains of the photoactive crystalline material layer (103) is ≥80%. The photoactive crystalline material layer (103) includes a backlight side (113) and a backlight crystal grain (31, 32, 33), where the backlight crystal grain (31, 32, 33) is a crystal grain exposed to the backlight side (113) and has a backlight crystal face exposed to the backlight side (113). At least one region of the backlight side (113) has an average flatness index Ravg being ≤75.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.