Light emitting device having third electrode

US12414408B2 · kind B2 · utility

Assignee

• AUO CORPORATION · TW

Inventors

• Yi-Hong Chen · New Taipei, TW
• Chia-An Lee · Hsinchu, TW
• Kuan-Heng Lin · Kaohsiung, TW

Key dates

• Filing date: Aug 18, 2022
• Grant date: Sep 9, 2025
• Expiry date: Nov 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882

Abstract

A light emitting device includes a semiconductor structure, an insulating layer, a first electrode, a second electrode, and a third electrode. The semiconductor structure includes a first type semiconductor layer, a second type semiconductor layer, and an active layer disposed between the first type semiconductor layer and the second type semiconductor layer. The insulating layer is disposed on the semiconductor structure. The first electrode is electrically connected to the first type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer. The first electrode, the second electrode, and the third electrode are structurally separated. The third electrode at least has a first portion. The first portion of the third electrode is disposed on a side wall of the semiconductor structure, and the insulating layer is located between the third electrode and the semiconductor structure.