Metal oxide particles having p-type semiconductivity, electronic device using the same, method for manufacturing electronic device, and image forming apparatus
US12414429B2 · kind B2 · utility
0Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2021 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Jul 8, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Metal oxide particles have p-type semiconductivity. The metal oxide particles have a volume-based particle size distribution having a first local maximum value and a second local maximum value. The first local maximum value is in a range of 0.1 μm or more and less than 5 μm, and the second local maximum value is in a range of 5 μm or more and less than 50 μm. A ratio of the second local maximum value to the first local maximum value is 0.5 or more and less than 2.0. 99% by volume or more of the metal oxide particles have a particle diameter in a range of from 0.1 to 50 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.