Semiconductor component including a dielectric layer

US12414470B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Daniel Monteiro Diniz Reis · Esslingen am Neckar, DE
• Daniel Pantel · Ditzingen, DE
• Frank Schatz · Kornwestheim, DE
• Jochen Tomaschko · Herrenberg, DE
• Mathias Mews · Reutlingen, DE
• Timo Schary · Grötzingen, DE

Key dates

• Filing date: Jun 23, 2020
• Grant date: Sep 9, 2025
• Expiry date: Dec 30, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/87

Abstract

A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times τ1 and τ2, and generate the maximum changes in barrier height δΦ1 and δΦ2 at the electrodes. τ1 and δΦ1 are associated with the first defect type, and τ2 and δΦ2 are associated with the second defect type. τ1<τ2 and δΦ1<δΦ2 apply.