High purity ingot for wafer production
US12415763B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jan 21, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Jul 20, 2044 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E30/30
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of forming a high purity ingot for wafer production, such as a silicon carbidewafer. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with the precursors; and granular material is then formed from the fiber. The method further includes forming the ingot from the granular material. In one aspect, the chemical deposition can include laser induced chemical vapor deposition. Further, the method can include separating one or more wafers from the ingot for use in semiconductor fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.