Device and method for sensing an over-temperature of a power semiconductor
US12416528B2 · kind B2 · utility
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1References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 17, 2020 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | May 3, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K2217/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention concerns a device and a method for sensing an over-temperature of a power semiconductor. The invention: provides a current pulse source through control electrodes of the power semiconductor, duplicates the current provided by the current pulse source and provides the duplicated current to an emulating device, compares the voltage across the control electrodes to the voltage across the emulating device, notifies the result of the comparison.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.