Magnetic sensor device
US12416691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2023 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Sep 15, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/05
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated sensor device includes: a semiconductor substrate comprising a horizontal Hall element, and an integrated magnetic flux concentrator located substantially above said horizontal Hall element, wherein the first magnetic flux concentrator has a shape with a geometric center which is aligned with a geometric centre of the horizontal Hall element; and wherein the shape has a height H and a transversal dimension D, wherein H≥30 μm and/or wherein (H/D)≥25%. The integrated magnetic flux concentrator may be partially incorporated in the “interconnection stack”. A method is provided for producing such an integrated sensor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.