Manufacturing process for LIDAR system with individualized semiconductor optical amplifier dies
US12416710B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2024 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Aug 21, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/343
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.