Thermal sensor device by back end of line metal resistor
US12417955B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2023 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Mar 1, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate having a front side and a back side, one or more dielectric layers over the front side, and a conductive structure. The one or more dielectric layers include a thermal sensor region and two dummy regions sandwiching the thermal sensor region along a second direction from a top view. The thermal sensor region and the two dummy regions extend longitudinally along a first direction generally perpendicular to the second direction from the top view. The conductive structure is embedded in the thermal sensor region of the one or more dielectric layers. The conductive structure includes conductive lines parallel to each other and extending longitudinally along the first direction, and conductive bars and vias electrically connecting the conductive lines. The conductive lines in a same dielectric layer of the one or more dielectric layers are electrically connected one by one zigzaggedly from the top view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.