Semiconductor structure and method for manufacturing semiconductor structure
US12419037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Jan 23, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor structure and a method for manufacturing a semiconductor structure are provided, which relate to the technical field of semiconductors. The semiconductor structure includes a substrate and a plurality of first conductive layers. The substrate includes a plurality of first trenches extending in a first direction and a plurality of second trenches extending in a second direction. A plurality of active pillars are provided between the plurality of first trenches and the plurality of second trenches. The first direction intersects with the second direction. Each of the plurality of first conductive layers is arranged on each of sidewalls, which are arrayed in the first direction, of a respective one of the plurality of active pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.