Semiconductor structure, manufacturing method therefor and memory

US12419058B2 · kind B2 · utility

Assignees

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN
• BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY · CN

Inventors

• Xiaoguang Wang · Hefei, CN
• Dinggui Zeng · Hefei, CN
• Huihui Li · Beijing, CN
• Kanyu Cao · Hefei, CN

Key dates

• Filing date: Jul 5, 2022
• Grant date: Sep 16, 2025
• Expiry date: Feb 18, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

A semiconductor structure, a manufacturing method therefor and a memory are provided. The semiconductor structure may at least include: a plurality of aligned transistors, in which the transistors share a same source plate, channels of the transistors are located above the source plate, the channel length direction of the transistors is perpendicular to a surface of the source plate, and a material of the channels includes a single crystal semiconductor; a plurality of drain contacts, electrically connected with drains of the transistors, in which even number of the transistors share one same drain contact; and a plurality of magnetic tunnel junctions, located on the drain contacts and electrically connected with the drain contacts in one-to-one correspondence.