Field effect transistor device

US12419082B2 · kind B2 · utility

Assignee

• Soochow University · CN

Inventors

• Mingxiang Wang · Suzhou, CN
• Lekai Chen · Suzhou, CN
• Dongli Zhang · Suzhou, CN
• Huaisheng Wang · Suzhou, CN

Key dates

• Filing date: Dec 1, 2021
• Grant date: Sep 16, 2025
• Expiry date: Dec 1, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/27

Abstract

The present invention discloses a field effect transistor device for improving the problem of the short-channel effect of a field effect transistor in the prior art, comprising: an active layer, comprising a source region, a drain region, and a channel region located between the source region and the drain region; a gate provided around the channel region; and a gate insulating layer provided between the gate and the channel region; wherein when a device is turned on, an effective channel, and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region and the drain region through the effective channel, and the equivalent source and/or equivalent drain to contribute an operating current.