Semiconductor device and method of fabricating the same
US12419086B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2023 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Jun 4, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes; a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern, wherein the channel pattern is connected to the source/drain pattern, a gate electrode on the channel pattern, and a gate contact connected to a top surface of the gate electrode, wherein the gate contact includes a capping layer directly contacting the top surface of the gate electrode and a metal layer on the capping layer, wherein the capping layer and the metal layer include the same metal, a concentration of oxygen in the metal layer ranges from between about 2 at % to about 10 at %, and a maximum concentration of oxygen in the capping layer ranges from between about 15 at % to about 30 at %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.