Silicon carbide semiconductor device
US12419089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2023 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Mar 24, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A silicon carbide semiconductor device includes a drift layer, a first doped region, a second doped region, a gate trench, a third doped region and a gate electrode. The drift layer is disposed on a SiC substrate. The first doped region is disposed on the drift layer. The second doped region is disposed on the first doped region. The gate trench is extended from an upper surface of the second doped region through the first doped region and into the drift layer. The gate trench is formed in a manner dividing the drift layer into a plurality of mesas encircled by the gate trench, each of the mesas comprises a center portion and a plurality of leg portions extended from the center portion. The third doped region is arranged in the center portion of the mesa, and is disposed in the first doped region and adjacent to the second doped region. The gate electrode is arranged in the gate trench and dielectrically insulated from the first doped region, the second doped region and the drift layer by a gate insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.