Silicon photodetector using randomly arranged metal nanoparticles and method for manufacturing same
US12419133B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jan 12, 2023 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | May 23, 2044 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.