Patent · US Active

Light-emitting device

US12419147B2 · kind B2 · utility

0Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 28, 2022
Grant dateSep 16, 2025
Priority date
Expiry dateMar 21, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/825

Abstract

A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.