Growth inhibitor for forming thin film, method of forming thin film using growth inhibitor, and semiconductor substrate fabricated by method
US12421599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Sep 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.