Method for areal selective forming of thin film
US12421605B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2024 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | May 3, 2044 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4408
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method for areal selective forming of a thin film according to an exemplary embodiment of the present disclosure including: a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber; a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate; a purge step of purging the inside of the chamber; and a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film, in which the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.