Method for supplementary doping of monocrystalline silicon by lowering a device comprising a containing member provided with first and second through-holes
US12421619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Nov 25, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for supplementary doping of monocrystalline silicon by lowering a device comprising a containing member provided with first and second through-holes are provided. The device includes a hoisting member, a connecting member, and a containing member which are arranged in sequence from top to bottom in a vertical direction, wherein the hoisting member is connected with one end of the connecting member, and another end of the connecting member is movably connected with the containing member, so that the containing member is rotatable with respect to the connecting member. The containing member is provided with a first through-hole and a second through-hole, and the connecting member and the containing member are connected at a joint. A distance between the first through-hole and the joint is less than a distance between the second through-hole and the joint in the vertical direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.