Patent · US Active

Lithography production method

US12422400B2 · kind B2 · utility

0Cited by
2References
12Claims
0Family size

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Key dates

Filing dateJun 30, 2020
Grant dateSep 23, 2025
Priority date
Expiry dateJan 22, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/6741
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method for producing a device including a deposition of a first resin layer of lithography above or on a protective layer such that the protective layer is included between a conductive layer and the first resin layer; a first lithography of the first resin layer, the protective layer and the conductive layer; preserving, in at least one preserving area of the first lithography, the superposition of the first resin layer, the protective layer and the conductive layer, and depositing, at least on the at least one preserving area of the first lithography, a second resin layer of lithography without removing the first resin layer; a second lithography of the second resin and the first resin, in particular for the production of electrodes. One of the possible aims is to obtain a device without introducing an impurity into the conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.