Standard sample and manufacturing method thereof
US12422453B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2020 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Feb 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3083
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A substrate (101) is etched by etching processing with crystal anisotropy, thereby forming a recess (104) from the main surface of the substrate (101) to the inside of the substrate (101). A side surface (105) is almost a (111) plane, and the etching hardly progresses. As a result, a cross section of the recess (104) perpendicular to the longitudinal direction has a rectangular shape. Since an opening (103) of a mask pattern (102) has a rectangular shape in a planar view, the opening of the recess (104) has a rectangular shape in a planar view, and the recess (104) is formed into, for example, a rectangular parallelepiped shape. The recess (104) includes a side surface (105) that forms one plane perpendicular to the main surface of the substrate (101). The side surface (105) is a facet surface and is a tilting surface tilted from the (111) plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.