Method of operating memory device and memory device performing the same
US12424289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2023 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Dec 17, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of operating a memory device, a first operation is performed on a memory block by applying first driving voltages to a plurality of wordlines. After the first operation is completed, a first recovery operation in which the first driving voltages applied to the plurality of wordlines are discharged is performed. After the first recovery operation is completed, a second operation is performed on the memory block by applying second driving voltages to the plurality of wordlines. In the first recovery operation, first charges among a plurality of charges stored by the first driving voltages are stored in a charge recycling memory block connected to at least one charge recycling wordline. In the second operation, the second driving voltages are applied to the plurality of wordlines using the first charges stored in the charge recycling memory block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.