Chemical-resistant protective film
US12424441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Oct 15, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A protective film-forming composition excelling in preservation stability and having a favorable masking (protection) function against wet etching solutions when processing a semiconductor substrate, a protective film manufactured by using the composition, a substrate with a resist pattern, and a method for manufacturing a semiconductor device. The protective film-forming composition provides protection against wet etching solutions for semiconductors and contains: a polymer having a unit structure represented by Formula (1-1): Ar represents a benzene ring, a naphthalene ring, or an anthracene ring; R1 represents a hydroxy group, a mercapto group; n1 represents an integer from 0-3; n2 represents 1 or 2; L1 represents a single bond or an alkylene group that has 1-10 carbons; E represents an epoxy group; when n2=1, T1 represents an alkylene group that has 1-10 carbons; and when n2=2, T1 represents a nitrogen atom or an amide bond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.