Method for multi-level etch, semiconductor sensing device, and method for manufacturing semiconductor sensing device
US12424445B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | May 16, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/119
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor sensing device. The semiconductor sensing device includes a substrate having a sensing region. The sensing region includes an active feature. The active feature includes an anchor portion, an elevated portion, and a nanowire portion. The anchor portion is on a top surface of the substrate. The elevated portion is spaced from the top surface of the substrate by a vertical distance and connected to the anchor portion. The nanowire portion is on the top surface of the substrate and connected to the anchor portion. The vertical distance is greater than or equal to a thickness of the nanowire portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.