Semiconductor structure and semiconductor device
US12424555B2 · kind B2 · utility
0Cited by
10References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 12, 2023 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Mar 21, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor structure and a semiconductor device. The semiconductor structure includes a first conductive layer, a first barrier layer, and an insulating layer. The first conductive layer includes at least two traces, and a recess is formed between two adjacent ones of the traces. The first barrier layer is provided on a sidewall of the recess. The insulating layer fills the recess, and an air gap is formed in the insulating layer located in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.