Method of making a piezoelectric device
US12424998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jul 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/025
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This disclosure relates generally to a method of making a piezoelectric device. In some embodiments, a foundation structure is provided and a first metal is deposited over at least a first area of a top surface of the foundation structure to form a plurality of metal islands such that the plurality of metal islands self-assemble in a distributed manner over the at least the first area of the top surface of the foundation structure. Additionally, a piezoelectric material is deposited over the at least the first area of the top surface of the foundation structure to form a piezoelectric film over the at least the first area of the top surface of the foundation structure. The piezoelectric material is deposited over the first area of the top surface of the foundation structure to form the piezoelectric film and the piezoelectric film is polarity patterned into at least one non-piezoelectric portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.