Patent · US Active

Semiconductor structure with semiconductor pillars and method for manufacturing same

US12426232B2 · kind B2 · utility

0Cited by
5References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 22, 2022
Grant dateSep 23, 2025
Priority date
Expiry dateJan 11, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/0179

Abstract

A semiconductor structure includes: a substrate, a first gate structure, and a second gate structure. The substrate includes: discrete first semiconductor pillars arranged at a top of the substrate and extending in a vertical direction; and a second semiconductor pillar and a third semiconductor pillar extending in the vertical direction, the second and third semiconductor pillars are provided at a top of each first semiconductor pillar. The first gate structure is arranged in a middle region of the first semiconductor pillar and surrounds the first semiconductor pillar. The second gate structure is arranged in a middle region of the second semiconductor pillar and of the third semiconductor pillar, and includes a first ring structure and a second ring structure. The first ring structure surrounds the second semiconductor pillar, and the second ring structure surrounds the third semiconductor pillar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.