Semiconductor device
US12426245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Apr 1, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
A semiconductor device may include contact plug structures on a substrate, and an insulation structure filling a space between the contact plug structures to insulate the contact plug structures from each other. The contact plug structures may be spaced apart from each other in a first direction. The insulation structure may include a first insulation pattern and a second insulation pattern. The second insulation pattern may include an insulation material having an etch selectivity with respect to silicon oxide. The first insulation pattern may contact a portion of sidewalls of the second insulation pattern and a portion of sidewalls of the contact plug structure. The first insulation pattern may include a material having a band gap higher than a band gap of the second insulation pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.