Semiconductor structure and method for forming same

US12426246B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventors

• Gongyi Wu · Hefei, CN
• Ruigen Ding · Hefei, CN
• Xianxian Tang · Hefei, CN
• Nan Deng · Hefei, CN
• Yuchen Wang · Meishan City, CN

Key dates

• Filing date: Mar 3, 2023
• Grant date: Sep 23, 2025
• Expiry date: Mar 28, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/485

Abstract

Semiconductor structure and method forming the same are provided. The method includes: providing a substrate and discrete conductive structures on the substrate; forming an insulating layer on an upper surface of each of the conductive structures; forming an isolation structure on a side wall of each of the conductive structures and on a side wall of each of the insulating layers; removing part of the isolation structure located on the side wall of the insulating layer; removing part of the insulating layer that is far away from a respective one of the conductive structures, to form and surround trenches by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers, a width of an opening of each trench being larger than a width of a bottom of each trench in a direction perpendicular to side walls of the trenches.