Semiconductor structure, method for manufacturing semiconductor structure, and memory

US12426251B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventors

• Deyuan Xiao · Shanghai, CN
• Guangsu SHAO · Hefei, CN
• Weiping BAI · Hefei, CN
• Yunsong QIU · Hefei, CN

Key dates

• Filing date: Jan 10, 2023
• Grant date: Sep 23, 2025
• Expiry date: May 26, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

A semiconductor structure, a method for manufacturing a semiconductor structure, and a memory are provided. The semiconductor structure includes a substrate, a plurality of active pillars arranged above the substrate, a storage structure, and a plurality of transistors. The active pillars are arranged in an array in a first direction and in a second direction. Each active pillar includes a first sub active pillar and a second sub active pillar arranged on the first sub active pillar. The first direction and the second direction intersect with each other and are both parallel to a top surface of the substrate. A material of the first sub active pillar includes a first element, and resistivity of the first sub active pillar including the first element is less than resistivity of the first sub active pillar absence of the first element. The storage structure covers a sidewall of the first sub active pillar.