Integrated circuit device
US12426259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Mar 27, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a substrate comprising an active region and a word line trench, a word line extending longitudinally in a first horizontal direction in the word line trench, a buried insulating layer on the word line, a conductive plug on the substrate, and a pad structure on the substrate and having a portion in contact with a top surface of the active region and a portion in contact with the conductive plug. The pad structure includes a conductive pad having a bottom surface in contact with the top surface of the active region and a pad spacer in contact with a sidewall of the conductive pad and protruding beyond an inner sidewall of the word line trench in a second horizontal direction orthogonal to the first horizontal direction such that the pad spacer vertically overlaps a portion of the word line in the word line trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.