Semiconductor memory device
US12426271B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Feb 1, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Mar 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A semiconductor memory device is provided. The semiconductor memory device includes a substrate; a transistor disposed above the substrate, the transistor having a channel region defining an inner space; and a capacitor passing through the transistor in a vertical direction in the inner space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.