Ferroelectric tunnel junction memory devices with enhanced read window
US12426272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Oct 27, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first capacitor having a ferroelectric film disposed between two electrodes, a second capacitor, having another dielectric film disposed between two electrodes. A first voltage is applied across the first capacitor such that the ferroelectric film is polarized, altering the effective resistance through the device. A second voltage is applied across the first capacitor, such that a leakage current transits the ferroelectric film, and accumulates along an electrode of the second capacitor, and the gate of a transistor, thereby effecting a change to the drain to source resistance of the transistor which may be measured to determine the polarization state of the ferroelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.