Semiconductor device with inductive component and method of forming
US12426284B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Sep 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/645
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes: forming a passivation layer over a conductive pad that is disposed over a substrate; and forming an inductive component over the passivation layer, including: forming a first insulation layer and a first magnetic layer successively over the passivation layer; forming a first polymer layer over the first magnetic layer; forming a first conductive feature over the first polymer layer; forming a second polymer layer over the first polymer layer and the first conductive feature; patterning the second polymer layer, where after the patterning, a first sidewall of the second polymer layer includes multiple segments, where an extension of a first segment of the multiple segments intersects the second polymer layer; and after patterning the second polymer layer, forming a second insulation layer and a second magnetic layer successively over the second polymer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.