Semiconductor device
US12426326B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Feb 3, 2023 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jan 15, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face; a first semiconductor region of a first conductive type in the semiconductor layer, in contact with the second face, and including a first portion having a first minimum width, a second portion having a second minimum width smaller than the first minimum width, and a third portion connecting the first portion and the second portion and having a third minimum width smaller than the second minimum width; a plurality of second semiconductor regions of a second conductive type in contact with the second face; a third semiconductor region of the second conductive type between the first semiconductor region and the first face; a fourth semiconductor region of the first conductive type; a fifth semiconductor region of the second conductive type; a gate electrode facing the fourth semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.