Semiconductor device having wide tuning range varactor and method of manufacturing the same
US12426351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Dec 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/64
Abstract
The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device comprises a substrate, a first gate electrode, a second gate electrode, a first doped region, a second doped region, a third doped region, and a first interconnection structure. The substrate comprises a well region of a first conductive type. The first and second gate electrodes are disposed on the substrate. The first, second, and third doped regions are embedded within the well region and are of the first conductive type. The first interconnection structure electrically connects the first gate electrode and the second gate electrode. The first doped region and the second doped region are disposed on opposite sides of the first gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.