Semiconductor device and method for fabricating semiconductor device
US12426352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2023 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Nov 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a semiconductor substrate; a transistor portion provided in the semiconductor substrate; a current sensing portion for detecting current flowing through the transistor portion; an emitter electrode set to an emitter potential of the transistor portion; a sense electrode electrically connected to the current sensing portion; and a Zener diode electrically connected between the emitter electrode and the sense electrode. Provided is a semiconductor device fabricating method including providing a transistor portion in a semiconductor substrate; providing a current sensing portion for detecting current flowing through the transistor portion; providing an emitter electrode set to an emitter potential of the transistor portion; providing a sense electrode electrically connected to the current sensing portion; and providing a Zener diode electrically connected between the emitter electrode and the sense electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.