Latch-up free high voltage device
US12426362B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Dec 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/854
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a first drain/source region and a second drain/source region surrounded by an isolation ring formed over a substrate, the isolation ring formed being configured to be floating, and a first diode connected between the substrate and the isolation ring, wherein the first diode is a Schottky diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.