Method of laser treatment of a semiconductor wafer comprising AlGaInP-LEDs to increase their light generating efficiency

US12426404B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Jens Ebbecke · Rottenburg a. d. Laaber, DE
• Philipp Kreuter · Teublitz, DE
• Christoph Klemp · Regensburg, DE
• Andreas Biebersdorf · Regensburg, DE
• Ines Pietzonka · Donaustauf, DE
• Petrus Sundgren · Lappersdorf, DE

Key dates

• Filing date: May 19, 2020
• Grant date: Sep 23, 2025
• Expiry date: Jun 22, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments provide a method for treating a semiconductor wafer comprising a set of aluminum gallium indium phosphide light emitting diodes (AlGaInP-LEDs) to increase a light generating efficiency of the AlGaInP-LEDs, wherein each AlGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area and a peripheral edge surrounding the central light generating area, wherein the method includes treating the peripheral edge of the core active layer of each AlGaInP-LED with a laser beam thereby increasing a minimum band gap in each peripheral edge to such an extent that, during operation of the AlGaInP-LED, an electron-hole recombination is essentially confined to the central light generating area.