Preparation method for high nickel ternary precursor capable of preferential growth of crystal planes by adjusting and controlling addition amount of seed crystals
US12428311B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Oct 19, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A preparation method for a high nickel ternary precursor capable of preferential growth of crystal planes by adjusting and controlling the addition amount of seed crystals. The method comprises the following steps: 1) feeding a ternary metal solution into a reaction kettle containing a first base liquid for reaction, and when the particle size reaches 1.5 to 3.0 μm, stopping the feeding, so as to obtain a seed crystal slurry; 2) simultaneously adding the ternary metal solution, a liquid alkali solution, and an ammonia solution in cocurrent flow into a growth kettle containing a second base solution for reaction, when the particle size reaches 6 to 8 μm, adding the seed crystal slurry into the reaction system, and controlling the particle size to be 9.0 to 11.0 μm by adjusting the feed rate of the seed crystal, so as to obtain the target object. In the preparation method, by adding seed crystals continuously, the crystal plane parameters of 001 peak in the prepared ternary precursor material is lower than the crystal plane parameters of 101 peak, facilitating the embedding of Li ions, and effectively improving the performance of a battery prepared by using the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.