Optoelectronic synaptic device including quantum dot(QD)-transition metal chalcogenide(TMD) heterojunction
US12428595B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2024 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Aug 14, 2044 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
As the optoelectronic synaptic device according to a preferred embodiment includes a photoactive layer in which a heterojunction is formed as inorganic quantum dots that accept a near-infrared light signal directly contacts a transition metal dichalcogenide as a two-dimensional semiconductor material that exhibits synaptic characteristics, there is an effect of making a synaptic response to an optical signal in the near-infrared wavelength range. Therefore, as a function of simulating the human visual-brain function, which shows the neuromorphic characteristics by the photo response (visual response) of the infrared wavelength, together with light detection characteristics sensitively and rapidly responding to an infrared wavelength signal as well as a visible light signal, can be implemented in a single device for the sake of accurate recognition of objects, it can be easily applied in the autonomous driving mobility field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.