Patent · US Active

Semiconductor low-temperature elemental mercury generator

US12429404B1 · kind B1 · utility

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7Claims
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Key dates

Filing dateJul 8, 2025
Grant dateSep 30, 2025
Priority date
Expiry dateJul 8, 2045

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N2001/386
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor low-temperature elemental mercury generator is provided, and includes a gas source and a mercury pool generating chamber, the gas source is communicated with a carrier gas pipeline and a dilution gas pipeline. The mercury pool generating chamber includes a semiconductor refrigeration device, a gas mixing device and a coil, the coil is kept at a constant temperature through the semiconductor refrigeration device, the carrier gas pipeline is communicated with the coil, and the gas mixing device is communicated with a gas outlet of the coil and the dilution gas pipeline. The semiconductor low-temperature elemental mercury generator has the advantages of simple operation and accurate mercury standard gas concentration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.