Semiconductor device and method for manufacturing semiconductor device
US12431399B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2021 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Sep 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an insulating layer, a semiconductor element, a wiring layer and a sealing resin. The insulating layer includes obverse and reverse surfaces spaced apart in a thickness direction, and a penetrated part extending in the thickness direction. The semiconductor element, in contact with the obverse surface, includes an electrode corresponding to the penetrated part. The wiring layer includes connecting and main parts, where the connecting part is in the penetrated part and contacts the electrode, and the main part is connected to the connecting part on the reverse surface. The sealing resin, contacting the obverse surface, covers the semiconductor element. The electrode has a connecting surface facing the connecting part and including a first region exposed from the insulating layer through the penetrated part and a second region contacting the insulating layer. The first region has a greater surface roughness than the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.