Ring oscillators based on feedback field-effect transistors
US12431875B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2024 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Jul 18, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/0315
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The feedback field-effect transistor-based ring oscillator includes a plurality of feedback field-effect transistors each in which a diode structure is present as an n-type doped channel region and a p-type doped channel region between a drain terminal and a source terminal, a gate terminal is present in the diode structure, wherein the plurality of feedback field-effect transistors operates as p-channel mode when the gate terminal is present on the n-type doped channel region and operates as n-channel mode when the gate terminal is present on the p-type doped channel region, and in a plurality of inverters formed by the plurality of feedback field-effect transistor, an output terminal of an inverter of each stage is input to an input terminal of a next stage and an oscillation operation is performed based on supply voltage applied through the drain terminal and the source terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.