Capacitor integrated with memory element of memory cell
US12432936B2 · kind B2 · utility
0Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Apr 6, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a capacitor integrated with a memory element of a memory cell and methods of manufacture. The structure includes: at least one memory cell comprising a memory element with a top conductor material; and a capacitor connected to the memory element by the top conductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.