Semiconductor structure and method for manufacturing same

US12432940B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventors

• Jun Xia · Hefei, CN
• Shijie Bai · Hefei, CN

Key dates

• Filing date: May 26, 2022
• Grant date: Sep 30, 2025
• Expiry date: Jan 23, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

A method for manufacturing a semiconductor structure comprises: forming a stacked structure on a base having an array area and a peripheral area; forming a first mask layer on the stacked structure, in which the first mask layer corresponding to the array area has a first pattern; ion doping the first mask layer on the array area to obtain a doped first mask layer; and etching the stacked structure through the doped first mask layer to transfer the first pattern to the stacked structure.